Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces
نویسندگان
چکیده
منابع مشابه
STM-Induced Hydrogen Desorption via a Hole Resonance
We report STM-induced desorption of H from Sis100d-Hs2 3 1d at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at 27 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5s hole resonance. The dependence of desorption rate on current and bias is analyzed using a ...
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ژورنال
عنوان ژورنال: Surface Science
سال: 1999
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(99)00202-2